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MOSFETs NCV8440ASTT3G
onsemi
NCV8440ASTT3G
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| Tab | Tab |
| PPAP | Yes |
| SVHC | Yes |
| EU RoHS | Compliant with Exemption |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 4 |
| Automotive | Yes |
| Lead Shape | Gull-wing |
| PCB changed | 3 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Dual Drain |
| Package Width | 3.5 |
| Package Height | 1.57 |
| Package Length | 6.5 |
| Product Category | Power MOSFET |
| Supplier Package | SOT-223 |
| Maximum IDSS (uA) | 10 |
| Standard Package Name | SOT |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 1180|1160|1150 |
| Typical Rise Time (ns) | 1525|1275|710 |
| Supplier Temperature Grade | Automotive |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 1690 |
| Typical Gate Charge @ Vgs (nC) | 4.5@4.5V|3.9@4.5V |
| Maximum Gate Source Voltage (V) | ±15 |
| Typical Turn-On Delay Time (ns) | 325|190|375 |
| Maximum Drain Source Voltage (V) | 59 |
| Typical Turn-Off Delay Time (ns) | 1530|1860|2220 |
| Maximum Gate Threshold Voltage (V) | 1.9 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 2.6 |
| Typical Input Capacitance @ Vds (pF) | 155@35V|170@25V |
| Maximum Drain Source Resistance (mOhm) | 110@10V |
| Maximum Gate Source Leakage Current (nA) | 10000 |
| Description |
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