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MOSFETs NDF06N60ZG-001
onsemi
NDF06N60ZG-001
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| SVHC | Yes |
| EU RoHS | Compliant with Exemption |
| ECCN (US) | EAR99 |
| Packaging | Tube |
| Part Status | Obsolete |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Product Category | Power MOSFET |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 28 |
| Typical Rise Time (ns) | 17 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 35000 |
| Typical Gate Charge @ 10V (nC) | 31 |
| Typical Gate Charge @ Vgs (nC) | 31@10V |
| Maximum Gate Source Voltage (V) | ±30 |
| Typical Turn-On Delay Time (ns) | 13 |
| Maximum Drain Source Voltage (V) | 600 |
| Typical Turn-Off Delay Time (ns) | 30 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 7.1 |
| Typical Input Capacitance @ Vds (pF) | 923@25V |
| Maximum Drain Source Resistance (mOhm) | 1200@10V |
| Description |
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