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NIMD6001NR2G
NIMD6001NR2G
MOSFETs NIMD6001NR2G
onsemi
NIMD6001NR2G
--
Diodes, Transistors and Thyristors
MOSFETs
NIMD6001NR2G.pdf
Specification
Product AttributeAttribute Value
PPAPYes
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveYes
Lead ShapeGull-wing
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationDual
Package Width4(Max)
Package Height1.5(Max)
Package Length5(Max)
Supplier PackageSOIC N
Maximum IDSS (uA)20
Standard Package NameSOP
Typical Fall Time (ns)9000
Typical Rise Time (ns)3900
Number of Elements per Chip2
Typical Gate Charge @ Vgs (nC)8.3@5V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)1700
Maximum Drain Source Voltage (V)60
Typical Turn-Off Delay Time (ns)15000
Maximum Gate Threshold Voltage (V)3
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)3.3
Typical Input Capacitance @ Vds (pF)150@15V
Maximum Drain Source Resistance (mOhm)110@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 60V 3.3A Automotive 8-Pin SOIC N T/R
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