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PMXB120EPEZ
PMXB120EPEZ
MOSFETs PMXB120EPEZ
Nexperia
PMXB120EPEZ
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Diodes, Transistors and Thyristors
MOSFETs
PMXB120EPEZ.pdf
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle
Package Width1
Package Height0.36(Max)
Package Length1.1
Product CategoryPower MOSFET
Supplier PackageDFN-D EP
Maximum IDSS (uA)1
Process TechnologyTMOS
Typical Fall Time (ns)7
Typical Rise Time (ns)11
Number of Elements per Chip1
Maximum Power Dissipation (mW)1070
Typical Gate Charge @ 10V (nC)6.2
Typical Gate Charge @ Vgs (nC)6.2@10V
Maximum Gate Source Voltage (V)20
Typical Output Capacitance (pF)41
Typical Turn-On Delay Time (ns)4
Maximum Drain Source Voltage (V)30
Typical Gate Plateau Voltage (V)2.7
Typical Turn-Off Delay Time (ns)16
Maximum Diode Forward Voltage (V)1.2
Typical Diode Forward Voltage (V)0.8
Typical Gate to Drain Charge (nC)1.1
Maximum Gate Threshold Voltage (V)2.5
Minimum Gate Threshold Voltage (V)1
Typical Gate Threshold Voltage (V)1.5
Typical Gate to Source Charge (nC)0.9
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)2.4
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)309@15V
Maximum Drain Source Resistance (mOhm)120@10V
Maximum Gate Source Leakage Current (nA)10000
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)10
Maximum Power Dissipation on PCB @ TC=25°C (W)1070
Typical Reverse Transfer Capacitance @ Vds (pF)32@15V
Maximum Continuous Drain Current on PCB @ TC=25°C (A)2.4
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)312
Description
Trans MOSFET P-CH 30V 2.4A 3-Pin DFN-D EP T/R
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