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MOSFETs NTD5C648NLT4G
onsemi
NTD5C648NLT4G
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| HTS | 8541.29.00.95 |
| Tab | Tab |
| PPAP | No |
| SVHC | Yes |
| EU RoHS | Compliant with Exemption |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | Yes |
| Lead Shape | Gull-wing |
| PCB changed | 2 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Package Width | 6.22(Max) |
| Package Height | 2.38(Max) |
| Package Length | 6.73(Max) |
| Product Category | Power MOSFET |
| Supplier Package | DPAK |
| Standard Package Name | TO-252 |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 68 |
| Typical Rise Time (ns) | 91 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 4400 |
| Typical Gate Charge @ 10V (nC) | 39 |
| Typical Gate Charge @ Vgs (nC) | 17@4.5V|39@10V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 21 |
| Maximum Drain Source Voltage (V) | 60 |
| Typical Turn-Off Delay Time (ns) | 47 |
| Maximum Gate Threshold Voltage (V) | 60 |
| Typical Gate Threshold Voltage (V) | 4.5|10 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 22 |
| Typical Input Capacitance @ Vds (pF) | 2900@30V |
| Maximum Drain Source Resistance (MOhm) | 4.1@10V |
| Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 22 (Ta)|91 (Tc) |
| Description |
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