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NTF5P03T3G
NTF5P03T3G
MOSFETs NTF5P03T3G
onsemi
NTF5P03T3G
--
Diodes, Transistors and Thyristors
MOSFETs
NTF5P03T3G.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count4
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle Dual Drain
Package Width3.5
Package Height1.57
Package Length6.5
Product CategoryPower MOSFET
Supplier PackageSOT-223
Maximum IDSS (uA)1
Standard Package NameSOT
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)24|20
Typical Rise Time (ns)45|33
Number of Elements per Chip1
Maximum Power Dissipation (mW)3130
Typical Gate Charge @ 10V (nC)15
Typical Gate Charge @ Vgs (nC)15@10V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)153
Typical Turn-On Delay Time (ns)16|10
Maximum Drain Source Voltage (V)30
Typical Gate Plateau Voltage (V)3
Typical Turn-Off Delay Time (ns)23|38
Maximum Diode Forward Voltage (V)1.5
Typical Diode Forward Voltage (V)1.1
Maximum Gate Threshold Voltage (V)3
Minimum Gate Threshold Voltage (V)1
Typical Gate Threshold Voltage (V)1.75
Typical Reverse Recovery Time (ns)34
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)5.2
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)500@25V
Typical Reverse Recovery Charge (nC)36
Maximum Drain Source Resistance (MOhm)100@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)26
Maximum Power Dissipation on PCB @ TC=25°C (W)3.13
Typical Reverse Transfer Capacitance @ Vds (pF)58@25V
Maximum Continuous Drain Current on PCB @ TC=25°C (A)5.2
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)80
Description
Trans MOSFET P-CH 30V 5.2A 4-Pin(3+Tab) SOT-223 T/R
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