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NTGS3443T1G
NTGS3443T1G
MOSFETs NTGS3443T1G
onsemi
NTGS3443T1G
--
Diodes, Transistors and Thyristors
MOSFETs
NTGS3443T1G.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveNo
Lead ShapeGull-wing
PCB changed6
Part StatusActive
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle Quad Drain
Package Width1.5
Package Height0.94
Package Length3
Product CategoryPower MOSFET
Supplier PackageTSOP
Maximum IDSS (uA)1
Standard Package NameSOP
Typical Fall Time (ns)31
Typical Rise Time (ns)18
Number of Elements per Chip1
Maximum Power Dissipation (mW)2000
Typical Gate Charge @ Vgs (nC)7.5@4.5V
Maximum Gate Source Voltage (V)±12
Typical Output Capacitance (pF)320
Typical Turn-On Delay Time (ns)10
Maximum Drain Source Voltage (V)20
Typical Gate Plateau Voltage (V)2.5
Typical Turn-Off Delay Time (ns)30
Maximum Diode Forward Voltage (V)1.2
Typical Diode Forward Voltage (V)0.83
Typical Gate to Drain Charge (nC)2.9
Maximum Gate Threshold Voltage (V)1.5
Minimum Gate Threshold Voltage (V)0.6
Typical Gate Threshold Voltage (V)0.95
Typical Gate to Source Charge (nC)1.4
Typical Reverse Recovery Time (ns)30
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)4.4
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)565@5V
Maximum Drain Source Resistance (MOhm)65@4.5V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)12
Maximum Pulsed Drain Current @ TC=25°C (A)20
Maximum Power Dissipation on PCB @ TC=25°C (W)2
Typical Reverse Transfer Capacitance @ Vds (pF)120@5V
Maximum Continuous Drain Current on PCB @ TC=25°C (A)3.1
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)244
Description
Trans MOSFET P-CH 20V 4.4A 6-Pin TSOP T/R
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