Product Attribute | Attribute Value |
Tab | Tab |
PPAP | No |
EU RoHS | Compliant with Exemption |
Mounting | Through Hole |
ECCN (US) | EAR99 |
Packaging | Tube |
Pin Count | 4 |
Automotive | No |
PCB changed | 4 |
Part Status | Active |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single Dual Source |
Package Width | 5 |
Package Height | 22.54 |
Package Length | 15.6 |
Product Category | Power MOSFET |
Supplier Package | TO-247 |
Maximum IDSS (uA) | 2 |
Process Technology | SuperFET III |
Typical Fall Time (ns) | 2.6 |
Typical Rise Time (ns) | 7.2 |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 266000 |
Typical Gate Charge @ 10V (nC) | 80 |
Typical Gate Charge @ Vgs (nC) | 80@10V |
Maximum Gate Source Voltage (V) | ±30 |
Typical Turn-On Delay Time (ns) | 28 |
Maximum Drain Source Voltage (V) | 650 |
Typical Turn-Off Delay Time (ns) | 81 |
Maximum Gate Threshold Voltage (V) | 4 |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 40 |
Typical Input Capacitance @ Vds (pF) | 3750@400V |
Maximum Drain Source Resistance (MOhm) | 67@10V |
Maximum Gate Source Leakage Current (nA) | 100 |
Description |