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NTJD4158CT1G
NTJD4158CT1G
MOSFETs NTJD4158CT1G
onsemi
NTJD4158CT1G
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Diodes, Transistors and Thyristors
MOSFETs
NTJD4158CT1G.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveNo
Lead ShapeGull-wing
PCB changed6
Part StatusActive
Channel ModeEnhancement
Channel TypeN|P
ConfigurationDual
Package Width1.25
Package Height0.9
Package Length2
Product CategorySmall Signal
Supplier PackageSC-88
Maximum IDSS (uA)1
Process TechnologyTMOS
Standard Package NameSC
Typical Fall Time (ns)78@N Channel|3.5@P Channel
Typical Rise Time (ns)66@N Channel|6.5@P Channel
Number of Elements per Chip2
Maximum Power Dissipation (mW)270
Typical Gate Charge @ Vgs (nC)0.9@5V@N Channel|2.2@4.5V@P Channel
Maximum Gate Source Voltage (V)±20@N Channel|±12@P Channel
Typical Output Capacitance (pF)19@N Channel|25@P Channel
Typical Turn-On Delay Time (ns)15@N Channel|5.8@P Channel
Maximum Drain Source Voltage (V)30@N Channel|20@P Channel
Typical Gate Plateau Voltage (V)2.3@N Channel|2@P Channel
Typical Turn-Off Delay Time (ns)56@N Channel|13.5@P Channel
Maximum Diode Forward Voltage (V)0.7@N Channel|1.2@P Channel
Typical Diode Forward Voltage (V)0.65@N Channel|0.8@P Channel
Typical Gate to Drain Charge (nC)0.2@N Channel|0.65@P Channel
Maximum Gate Threshold Voltage (V)1.5
Minimum Gate Threshold Voltage (V)0.8@N Channel|0.45@P Channel
Typical Gate Threshold Voltage (V)1.2@N Channel|0.61@P Channel
Typical Gate to Source Charge (nC)0.3@N Channel|0.5@P Channel
Typical Reverse Recovery Time (ns)12.4@N Channel|10.6@P Channel
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)0.25@N Channel|0.88@P Channel
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)20@5V@N Channel|155@20V@P Channel
Maximum Drain Source Resistance (mOhm)1500@4.5V@N Channel|260@4.5V@P Channel
Maximum Gate Source Leakage Current (nA)1000
Maximum Positive Gate Source Voltage (V)20@N Channel|12@P Channel
Maximum Pulsed Drain Current @ TC=25°C (A)0.5@N Channel|3@P Channel
Maximum Power Dissipation on PCB @ TC=25°C (W)0.27
Typical Reverse Transfer Capacitance @ Vds (pF)7.25@5V@N Channel|18@20V@P Channel
Maximum Continuous Drain Current on PCB @ TC=25°C (A)0.25@N Channel|0.88@P Channel
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)460
Description
Trans MOSFET N/P-CH 30V/20V 0.25A/0.88A 6-Pin SC-88 T/R
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