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MOSFETs NTMFS4H02NFT3G
onsemi
NTMFS4H02NFT3G
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| Tab | Tab |
| PPAP | No |
| SVHC | Yes |
| EU RoHS | Compliant with Exemption |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 5 |
| Automotive | No |
| Lead Shape | Flat |
| PCB changed | 4 |
| Part Status | LTB |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Dual Drain Triple Source |
| Package Width | 5.9 |
| Package Height | 1.05(Max) |
| Package Length | 4.9 |
| Product Category | Power MOSFET |
| Supplier Package | SO-FL |
| Maximum IDSS (uA) | 500 |
| Standard Package Name | SO |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 7.72|4.93 |
| Typical Rise Time (ns) | 46.7|35.7 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 3130 |
| Typical Gate Charge @ 10V (nC) | 40.9 |
| Typical Gate Charge @ Vgs (nC) | 18.7@4.5|40.9@10V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 13.5|10 |
| Maximum Drain Source Voltage (V) | 25 |
| Typical Turn-Off Delay Time (ns) | 32.3|24.8 |
| Maximum Gate Threshold Voltage (V) | 2.1 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 37 |
| Typical Input Capacitance @ Vds (pF) | 2652@12V |
| Maximum Drain Source Resistance (MOhm) | 1.4@10V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Description |
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