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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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NTMT190N65S3H
NTMT190N65S3H
MOSFETs NTMT190N65S3H
onsemi
NTMT190N65S3H
--
Diodes, Transistors and Thyristors
MOSFETs
NTMT190N65S3H.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingReel
Pin Count4
AutomotiveNo
PCB changed4
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Package Width8
Package Height1.05(Max)
Package Length8
Product CategoryPower MOSFET
Supplier PackageTDFN EP
Process TechnologySuperFET III
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)3.7
Typical Rise Time (ns)8.1
Number of Elements per Chip1
Maximum Power Dissipation (mW)129000
Typical Gate Charge @ 10V (nC)31
Typical Gate Charge @ Vgs (nC)31@10V
Maximum Gate Source Voltage (V)±30
Typical Turn-On Delay Time (ns)21
Maximum Drain Source Voltage (V)650
Typical Turn-Off Delay Time (ns)59
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)16
Typical Input Capacitance @ Vds (pF)1600@400V
Maximum Drain Source Resistance (MOhm)190@10V
Description
Trans MOSFET N-CH 650V 16A 4-Pin TDFN EP Reel
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