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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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NTMTS1D6N10MCTXG
NTMTS1D6N10MCTXG
MOSFETs NTMTS1D6N10MCTXG
onsemi
NTMTS1D6N10MCTXG
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Diodes, Transistors and Thyristors
MOSFETs
NTMTS1D6N10MCTXG.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
ECCN (US)EAR99
PackagingTape and Reel
AutomotiveNo
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Product CategoryPower MOSFET
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)29
Typical Rise Time (ns)24
Number of Elements per Chip1
Maximum Power Dissipation (mW)5000
Typical Gate Charge @ 10V (nC)106
Typical Gate Charge @ Vgs (nC)106@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)34
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)69
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)36
Typical Input Capacitance @ Vds (pF)7630@50V
Maximum Drain Source Resistance (mOhm)1.7@10V
Description
Trans MOSFET N-CH 100V 36A T/R
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