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NTP8G206NG
NTP8G206NG
MOSFETs NTP8G206NG
onsemi
NTP8G206NG
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Diodes, Transistors and Thyristors
MOSFETs
NTP8G206NG.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MaterialGaN
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width4.82(Max)
Package Height9.28(Max)
Package Length10.53(Max)
Product CategoryPower MOSFET
Supplier PackageTO-220
Maximum IDSS (uA)90
Standard Package NameTO-220
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)4
Typical Rise Time (ns)7.5
Number of Elements per Chip1
Maximum Power Dissipation (mW)96000
Typical Gate Charge @ Vgs (nC)6.2@4.5V
Maximum Gate Source Voltage (V)±18
Typical Turn-On Delay Time (ns)6
Maximum Drain Source Voltage (V)600
Typical Turn-Off Delay Time (ns)10
Maximum Gate Threshold Voltage (V)2.6
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)17
Typical Input Capacitance @ Vds (pF)800@480V
Maximum Drain Source Resistance (MOhm)180@8V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH GaN 600V 17A 3-Pin(3+Tab) TO-220 Tube
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