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SIR872ADP-T1-GE3
SIR872ADP-T1-GE3
MOSFETs SIR872ADP-T1-GE3
Vishay
SIR872ADP-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeNo Lead
PCB changed8
Part StatusNRND
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Package Width5.89
Package Height1.07(Max)
Package Length4.9
Product CategoryPower MOSFET
Supplier PackagePowerPAK SO
Maximum IDSS (uA)1
Process TechnologyTrenchFET
Standard Package NameSOP
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)8
Typical Rise Time (ns)13
Number of Elements per Chip1
Maximum Power Dissipation (mW)6250
Typical Gate Charge @ 10V (nC)31.3
Typical Gate Charge @ Vgs (nC)31.3@10V|22.8@7.5V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)12
Maximum Drain Source Voltage (V)150
Typical Turn-Off Delay Time (ns)17
Maximum Gate Threshold Voltage (V)4.5
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)53.7
Typical Input Capacitance @ Vds (pF)1286@75V
Maximum Drain Source Resistance (MOhm)18@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 150V 53.7A 8-Pin PowerPAK SO T/R
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