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NTS2101PT1G
NTS2101PT1G
MOSFETs NTS2101PT1G
onsemi
NTS2101PT1G
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Diodes, Transistors and Thyristors
MOSFETs
NTS2101PT1G.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle
Package Width1.24
Package Height0.85
Package Length2.1
Product CategoryPower MOSFET
Supplier PackageSC-70
Process TechnologyTMOS
Standard Package NameSOT
Typical Fall Time (ns)18
Typical Rise Time (ns)15
Number of Elements per Chip1
Maximum Power Dissipation (mW)290
Typical Gate Charge @ Vgs (nC)6.4@5V
Maximum Gate Source Voltage (V)±8
Typical Turn-On Delay Time (ns)6.2
Maximum Drain Source Voltage (V)8
Typical Turn-Off Delay Time (ns)26
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)1.4
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)640@8V
Maximum Drain Source Resistance (mOhm)100@4.5V
Description
Trans MOSFET P-CH 8V 1.4A 3-Pin SC-70 T/R
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