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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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SISH617DN-T1-GE3
SISH617DN-T1-GE3
MOSFETs SISH617DN-T1-GE3
Vishay
SISH617DN-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
SISH617DN-T1-GE3.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle Quad Drain Triple Source
Package Width3.3
Package Height0.93(Max)
Package Length3.3
Product CategoryPower MOSFET
Supplier PackagePowerPAK 1212-SWLH EP
Process TechnologyTrenchFET
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)11
Typical Rise Time (ns)9|43
Number of Elements per Chip1
Maximum Power Dissipation (mW)3700
Typical Gate Charge @ Vgs (nC)39@10V|20.5@4.5V
Maximum Gate Source Voltage (V)±25
Typical Turn-On Delay Time (ns)11|4.4
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)32|30
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)13.9
Typical Input Capacitance @ Vds (pF)1800@15V
Maximum Drain Source Resistance (MOhm)12.3@10V
Description
Trans MOSFET P-CH 30V 13.9A 8-Pin PowerPAK 1212-SWLH EP T/R
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