Product Attribute | Attribute Value |
PPAP | Yes |
EU RoHS | Compliant |
ECCN (US) | EAR99 |
Packaging | Tape and Reel |
Automotive | Yes |
Part Status | Active |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single |
Product Category | Power MOSFET |
Process Technology | SuperFET III |
Typical Fall Time (ns) | 4 |
Typical Rise Time (ns) | 26 |
Supplier Temperature Grade | Automotive |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 272000 |
Typical Gate Charge @ 10V (nC) | 66 |
Typical Gate Charge @ Vgs (nC) | 66@10V |
Maximum Gate Source Voltage (V) | ±30 |
Typical Turn-On Delay Time (ns) | 26 |
Maximum Drain Source Voltage (V) | 650 |
Typical Turn-Off Delay Time (ns) | 62 |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 36 |
Typical Input Capacitance @ Vds (pF) | 3020@400V |
Maximum Drain Source Resistance (MOhm) | 95@10V |
Description |