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MOSFETs NVB095N65S3F
onsemi
NVB095N65S3F
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Diodes, Transistors and Thyristors
MOSFETs
NVB095N65S3F.pdf
Specification
Product AttributeAttribute Value
PPAPYes
EU RoHSCompliant
ECCN (US)EAR99
PackagingTape and Reel
AutomotiveYes
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Product CategoryPower MOSFET
Process TechnologySuperFET III
Typical Fall Time (ns)4
Typical Rise Time (ns)26
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Maximum Power Dissipation (mW)272000
Typical Gate Charge @ 10V (nC)66
Typical Gate Charge @ Vgs (nC)66@10V
Maximum Gate Source Voltage (V)±30
Typical Turn-On Delay Time (ns)26
Maximum Drain Source Voltage (V)650
Typical Turn-Off Delay Time (ns)62
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)36
Typical Input Capacitance @ Vds (pF)3020@400V
Maximum Drain Source Resistance (MOhm)95@10V
Description
Trans MOSFET N-CH 650V 36A Automotive T/R
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