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NVBLS1D7N08H
NVBLS1D7N08H
MOSFETs NVBLS1D7N08H
onsemi
NVBLS1D7N08H
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Diodes, Transistors and Thyristors
MOSFETs
NVBLS1D7N08H.pdf
Specification
Product AttributeAttribute Value
PPAPYes
SVHCYes
EU RoHSCompliant with Exemption
ECCN (US)EAR99
PackagingTape and Reel
AutomotiveYes
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Seven Source
Product CategoryPower MOSFET
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)35
Typical Rise Time (ns)25
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Maximum Power Dissipation (mW)4400
Typical Gate Charge @ 10V (nC)121
Typical Gate Charge @ Vgs (nC)121@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)29
Maximum Drain Source Voltage (V)80
Typical Turn-Off Delay Time (ns)89
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)33
Typical Input Capacitance @ Vds (pF)7675@40V
Maximum Drain Source Resistance (MOhm)1.7@10V
Description
Trans MOSFET N-CH 80V 33A Automotive T/R
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