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NVHL040N120SC1
NVHL040N120SC1
MOSFETs NVHL040N120SC1
onsemi
NVHL040N120SC1
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
TabTab
PPAPYes
SVHCYes
EU RoHSCompliant with Exemption
MaterialSiC
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveYes
Lead ShapeThrough Hole
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width4.7
Package Height20.57
Package Length15.62
Product CategoryPower MOSFET
Supplier PackageTO-247
Maximum IDSS (uA)100
Standard Package NameTO-247
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)10.4
Typical Rise Time (ns)41
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Maximum Power Dissipation (mW)348000
Typical Gate Charge @ Vgs (nC)106@20V
Maximum Gate Source Voltage (V)25
Typical Output Capacitance (pF)140
Typical Turn-On Delay Time (ns)18
Maximum Drain Source Voltage (V)1200
Typical Gate Plateau Voltage (V)10
Typical Turn-Off Delay Time (ns)33
Typical Diode Forward Voltage (V)3.8
Typical Gate to Drain Charge (nC)26
Maximum Gate Threshold Voltage (V)4.3
Minimum Gate Threshold Voltage (V)1.8
Typical Gate Threshold Voltage (V)2.97
Typical Gate to Source Charge (nC)34
Typical Reverse Recovery Time (ns)24
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)60
Operating Junction Temperature (°C)-55 to 175
Typical Input Capacitance @ Vds (pF)1781@800V
Typical Reverse Recovery Charge (nC)125
Maximum Drain Source Resistance (mOhm)56@20V
Maximum Gate Source Leakage Current (nA)1000
Maximum Positive Gate Source Voltage (V)25
Maximum Pulsed Drain Current @ TC=25°C (A)240
Typical Reverse Transfer Capacitance @ Vds (pF)12@800V
Description
Trans MOSFET N-CH SiC 1.2KV 60A Automotive 3-Pin(3+Tab) TO-247 Tube
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