HTS | 8541.21.00.95 |
PPAP | Yes |
EU RoHS | Compliant |
Mounting | Surface Mount |
ECCN (US) | EAR99 |
Packaging | Tape and Reel |
Pin Count | 6 |
Automotive | Yes |
PCB changed | 6 |
Part Status | Active |
Channel Mode | Enhancement |
Channel Type | P|N |
Configuration | Dual |
Package Width | 1.25 |
Package Height | 0.9 |
Package Length | 2 |
Product Category | Small Signal |
Supplier Package | SC-88 |
Maximum IDSS (uA) | 1 |
Process Technology | TMOS |
Standard Package Name | SC |
Typical Fall Time (ns) | 3.5@P Channel|78@N Channel |
Typical Rise Time (ns) | 6.5@P Channel|66@N Channel |
Supplier Temperature Grade | Automotive |
Number of Elements per Chip | 2 |
Maximum Power Dissipation (mW) | 270 |
Typical Gate Charge @ Vgs (nC) | 2.2@4.5V@P Channel|0.9@5V@N Channel |
Maximum Gate Source Voltage (V) | ±12@P Channel|±20@N Channel |
Typical Output Capacitance (pF) | 25@P Channel|19@N Channel |
Typical Turn-On Delay Time (ns) | 5.8@P Channel|15@N Channel |
Maximum Drain Source Voltage (V) | 20@P Channel|30@N Channel |
Typical Gate Plateau Voltage (V) | 2.3@N Channel|2@P Channel |
Typical Turn-Off Delay Time (ns) | 13.5@P Channel|56@N Channel |
Maximum Diode Forward Voltage (V) | 0.7@N Channel|1.2@P Channel |
Typical Diode Forward Voltage (V) | 0.65@N Channel|0.8@P Channel |
Typical Gate to Drain Charge (nC) | 0.65@P Channel|0.2@N Channel |
Maximum Gate Threshold Voltage (V) | 1.5 |
Minimum Gate Threshold Voltage (V) | 0.8@N Channel|0.45@P Channel |
Typical Gate Threshold Voltage (V) | 1.2@N Channel|0.61@P Channel |
Typical Gate to Source Charge (nC) | 0.5@P Channel|0.3@N Channel |
Typical Reverse Recovery Time (ns) | 12.4@N Channel|10.6@P Channel |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 0.88@P Channel|0.25@N Channel |
Operating Junction Temperature (°C) | -55 to 150 |
Typical Input Capacitance @ Vds (pF) | 155@20V@P Channel|20@5V@N Channel |
Maximum Drain Source Resistance (MOhm) | 260@4.5V@P Channel|1500@4.5V@N Channel |
Maximum Gate Source Leakage Current (nA) | 1000 |
Maximum Positive Gate Source Voltage (V) | 20@N Channel|12@P Channel |
Maximum Pulsed Drain Current @ TC=25°C (A) | 0.5@N Channel|3@P Channel |
Maximum Power Dissipation on PCB @ TC=25°C (W) | 0.27 |
Typical Reverse Transfer Capacitance @ Vds (pF) | 7.25@5V@N Channel|18@20V@P Channel |
Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 0.25@N Channel|0.88@P Channel |
Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 460 |
Description | |