Welcome to BEAM! Tel: +86-553-5896615
Language: Help
NVJD4158CT1G
NVJD4158CT1G
MOSFETs NVJD4158CT1G
onsemi
NVJD4158CT1G
--
Diodes, Transistors and Thyristors
MOSFETs
NVJD4158CT1G.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
PPAPYes
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveYes
PCB changed6
Part StatusActive
Channel ModeEnhancement
Channel TypeP|N
ConfigurationDual
Package Width1.25
Package Height0.9
Package Length2
Product CategorySmall Signal
Supplier PackageSC-88
Maximum IDSS (uA)1
Process TechnologyTMOS
Standard Package NameSC
Typical Fall Time (ns)3.5@P Channel|78@N Channel
Typical Rise Time (ns)6.5@P Channel|66@N Channel
Supplier Temperature GradeAutomotive
Number of Elements per Chip2
Maximum Power Dissipation (mW)270
Typical Gate Charge @ Vgs (nC)2.2@4.5V@P Channel|0.9@5V@N Channel
Maximum Gate Source Voltage (V)±12@P Channel|±20@N Channel
Typical Output Capacitance (pF)25@P Channel|19@N Channel
Typical Turn-On Delay Time (ns)5.8@P Channel|15@N Channel
Maximum Drain Source Voltage (V)20@P Channel|30@N Channel
Typical Gate Plateau Voltage (V)2.3@N Channel|2@P Channel
Typical Turn-Off Delay Time (ns)13.5@P Channel|56@N Channel
Maximum Diode Forward Voltage (V)0.7@N Channel|1.2@P Channel
Typical Diode Forward Voltage (V)0.65@N Channel|0.8@P Channel
Typical Gate to Drain Charge (nC)0.65@P Channel|0.2@N Channel
Maximum Gate Threshold Voltage (V)1.5
Minimum Gate Threshold Voltage (V)0.8@N Channel|0.45@P Channel
Typical Gate Threshold Voltage (V)1.2@N Channel|0.61@P Channel
Typical Gate to Source Charge (nC)0.5@P Channel|0.3@N Channel
Typical Reverse Recovery Time (ns)12.4@N Channel|10.6@P Channel
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)0.88@P Channel|0.25@N Channel
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)155@20V@P Channel|20@5V@N Channel
Maximum Drain Source Resistance (MOhm)260@4.5V@P Channel|1500@4.5V@N Channel
Maximum Gate Source Leakage Current (nA)1000
Maximum Positive Gate Source Voltage (V)20@N Channel|12@P Channel
Maximum Pulsed Drain Current @ TC=25°C (A)0.5@N Channel|3@P Channel
Maximum Power Dissipation on PCB @ TC=25°C (W)0.27
Typical Reverse Transfer Capacitance @ Vds (pF)7.25@5V@N Channel|18@20V@P Channel
Maximum Continuous Drain Current on PCB @ TC=25°C (A)0.25@N Channel|0.88@P Channel
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)460
Description
Trans MOSFET N/P-CH 30V/20V 0.25A/0.88A Automotive 6-Pin SC-88 T/R
Environmental Documents
Related products
Inquiry Price
Email
Batch
Quantity
Expected delivery time
Expected price
$
Popular Products
Manufacturer: STMicroelectronics
Inventory: 0
$0.13815
Manufacturer: Microchip Technology
Inventory: 0
$0.69541
Manufacturer: Microchip Technology
Inventory: 0
$0.21974
Manufacturer: STMicroelectronics
Inventory: 0
$0.43568
Manufacturer: Texas Instruments
Inventory: 3000
$3.36776
Manufacturer: Texas Instruments
Inventory: 0
$0.02555
Manufacturer: Texas Instruments
Inventory: 3000
$1.31986
Manufacturer: Texas Instruments
Inventory: 6000
$1.0644
Manufacturer: STMicroelectronics
Inventory: 1920
$3.51252
Manufacturer: ADI
Inventory: 0
$1.40371