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NVJD4401NT1G
NVJD4401NT1G
MOSFETs NVJD4401NT1G
onsemi
NVJD4401NT1G
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Diodes, Transistors and Thyristors
MOSFETs
NVJD4401NT1G.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
PPAPYes
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveYes
PCB changed6
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationDual
Package Width1.25
Package Height0.9
Package Length2
Product CategorySmall Signal
Supplier PackageSC-88
Maximum IDSS (uA)1
Standard Package NameSC
Typical Fall Time (ns)506
Typical Rise Time (ns)227
Number of Elements per Chip2
Maximum Power Dissipation (mW)550
Typical Gate Charge @ Vgs (nC)1.3@4.5V
Maximum Gate Source Voltage (V)±12
Typical Output Capacitance (pF)13
Typical Turn-On Delay Time (ns)83
Maximum Drain Source Voltage (V)20
Typical Gate Plateau Voltage (V)1.5
Typical Turn-Off Delay Time (ns)786
Maximum Diode Forward Voltage (V)1.1
Typical Diode Forward Voltage (V)0.76
Typical Gate to Drain Charge (nC)0.4
Maximum Gate Threshold Voltage (V)1.5
Minimum Gate Threshold Voltage (V)0.6
Typical Gate Threshold Voltage (V)0.92
Typical Gate to Source Charge (nC)0.2
Typical Reverse Recovery Time (ns)410
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)0.91
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)33@20V
Maximum Drain Source Resistance (mOhm)375@4.5V
Maximum Gate Source Leakage Current (nA)10000
Maximum Positive Gate Source Voltage (V)12
Maximum Pulsed Drain Current @ TC=25°C (A)1.2
Typical Reverse Transfer Capacitance @ Vds (pF)2.8@20V
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)458
Description
Trans MOSFET N-CH 20V 0.91A Automotive 6-Pin SC-88 T/R
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