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NVMFD6H846NLT1G
NVMFD6H846NLT1G
MOSFETs NVMFD6H846NLT1G
onsemi
NVMFD6H846NLT1G
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
PPAPYes
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveYes
Lead ShapeNo Lead
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationDual Dual Drain
Package Width5.9
Package Height1.05(Max)
Package Length4.9
Product CategoryPower MOSFET
Supplier PackageDFN EP
Maximum IDSS (uA)10
Standard Package NameDFN
Typical Fall Time (ns)7
Typical Rise Time (ns)40
Supplier Temperature GradeAutomotive
Number of Elements per Chip2
Maximum Power Dissipation (mW)3200
Typical Gate Charge @ 10V (nC)17
Typical Gate Charge @ Vgs (nC)17@10V|8@4.5V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)10
Maximum Drain Source Voltage (V)80
Typical Turn-Off Delay Time (ns)20
Maximum Gate Threshold Voltage (V)2
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)9.4
Typical Input Capacitance @ Vds (pF)900@40V
Maximum Drain Source Resistance (mOhm)15@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 80V 9.4A 8-Pin DFN EP T/R
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