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NVMFS5C460NLAFT1G
NVMFS5C460NLAFT1G
MOSFETs NVMFS5C460NLAFT1G
onsemi
NVMFS5C460NLAFT1G
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPYes
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count5
AutomotiveYes
Lead ShapeFlat
PCB changed5
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Package Width5.9
Package Height1.05(Max)
Package Length4.9
Product CategoryPower MOSFET
Supplier PackageSO-FL EP
Maximum IDSS (uA)10
Standard Package NameDFN
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)4.4
Typical Rise Time (ns)3.4
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Maximum Power Dissipation (mW)3600
Typical Gate Charge @ 10V (nC)23
Typical Gate Charge @ Vgs (nC)23@10V|11@4.5V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)530
Typical Turn-On Delay Time (ns)9.2
Maximum Drain Source Voltage (V)40
Typical Turn-Off Delay Time (ns)17
Maximum Diode Forward Voltage (V)1.2
Maximum Gate Threshold Voltage (V)2
Minimum Gate Threshold Voltage (V)1.2
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)21
Operating Junction Temperature (°C)-55 to 175
Typical Input Capacitance @ Vds (pF)1300@25V
Maximum Drain Source Resistance (mOhm)4.5@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)396
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)42
Description
Trans MOSFET N-CH 40V 21A Automotive 5-Pin(4+Tab) SO-FL T/R
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