Product Attribute | Attribute Value |
HTS | 8541.21.00.95 |
Tab | Tab |
PPAP | No |
EU RoHS | Compliant |
Mounting | Through Hole |
ECCN (US) | EAR99 |
Packaging | Rail |
Pin Count | 3 |
Automotive | No |
PCB changed | 3 |
Part Status | Obsolete |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single |
Package Width | 2.5(Max) |
Package Height | 6.3(Max) |
Package Length | 6.8(Max) |
Product Category | Power MOSFET |
Supplier Package | TO-251 |
Process Technology | UltraFET |
Standard Package Name | TO-251 |
Typical Fall Time (ns) | 50|37 |
Typical Rise Time (ns) | 89|34 |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 49000 |
Typical Gate Charge @ 10V (nC) | 12 |
Typical Gate Charge @ Vgs (nC) | 12@10V |
Maximum Gate Source Voltage (V) | ±16 |
Typical Turn-On Delay Time (ns) | 13|5.3 |
Maximum Drain Source Voltage (V) | 60 |
Typical Turn-Off Delay Time (ns) | 22|41 |
Maximum Operating Temperature (°C) | 175 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 18 |
Typical Input Capacitance @ Vds (pF) | 485@25V |
Maximum Drain Source Resistance (mOhm) | 63@10V |
Description |