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MOSFETs NVMFS6B75NLT3G
onsemi
NVMFS6B75NLT3G
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| Tab | Tab |
| PPAP | Yes |
| SVHC | Yes |
| EU RoHS | Compliant with Exemption |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 5 |
| Automotive | Yes |
| Lead Shape | Flat |
| PCB changed | 4 |
| Part Status | Obsolete |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Quad Drain Triple Source |
| Package Width | 5.9 |
| Package Height | 1.05(Max) |
| Package Length | 4.9 |
| Product Category | Power MOSFET |
| Supplier Package | SO-FL |
| Maximum IDSS (uA) | 10 |
| Standard Package Name | SO |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 71.5 |
| Typical Rise Time (ns) | 88.3 |
| Supplier Temperature Grade | Automotive |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 3500 |
| Typical Gate Charge @ 10V (nC) | 11.3 |
| Typical Gate Charge @ Vgs (nC) | 11.3@10V|5.4@4.5V |
| Maximum Gate Source Voltage (V) | ±16 |
| Typical Output Capacitance (pF) | 260 |
| Typical Turn-On Delay Time (ns) | 9.1 |
| Maximum Drain Source Voltage (V) | 100 |
| Typical Gate Plateau Voltage (V) | 3.8 |
| Typical Turn-Off Delay Time (ns) | 16 |
| Maximum Diode Forward Voltage (V) | 1.2 |
| Typical Diode Forward Voltage (V) | 0.94 |
| Typical Gate to Drain Charge (nC) | 1.5 |
| Maximum Gate Threshold Voltage (V) | 3 |
| Minimum Gate Threshold Voltage (V) | 1 |
| Typical Gate to Source Charge (nC) | 3.2 |
| Typical Reverse Recovery Time (ns) | 38.4 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 7 |
| Operating Junction Temperature (°C) | -55 to 175 |
| Typical Input Capacitance @ Vds (pF) | 740@25V |
| Typical Reverse Recovery Charge (nC) | 40 |
| Maximum Drain Source Resistance (mOhm) | 30@10V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Positive Gate Source Voltage (V) | 16 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 141 |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 56 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 20@25V |
| Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 28 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 43 |
| Description |
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