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MOSFETs NVMFS6H800NLT1G
onsemi
NVMFS6H800NLT1G
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| Tab | Tab |
| PPAP | Yes |
| SVHC | Yes |
| EU RoHS | Compliant with Exemption |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Reel |
| Pin Count | 5 |
| Automotive | Yes |
| Lead Shape | Flat |
| PCB changed | 4 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Quad Drain Triple Source |
| Package Width | 5.9 |
| Package Height | 1.05(Max) |
| Package Length | 4.9 |
| Product Category | Power MOSFET |
| Supplier Package | SO-FL |
| Maximum IDSS (uA) | 10 |
| Standard Package Name | SO |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 163 |
| Typical Rise Time (ns) | 153 |
| Supplier Temperature Grade | Automotive |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 3900 |
| Typical Gate Charge @ 10V (nC) | 112 |
| Typical Gate Charge @ Vgs (nC) | 112@10V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 20 |
| Maximum Drain Source Voltage (V) | 80 |
| Typical Turn-Off Delay Time (ns) | 118 |
| Maximum Gate Threshold Voltage (V) | 2 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 30 |
| Typical Input Capacitance @ Vds (pF) | 6900@40V |
| Maximum Drain Source Resistance (MOhm) | 1.9@10V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 22@40V |
| Description |
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