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SIHG050N60E-GE3
SIHG050N60E-GE3
MOSFETs SIHG050N60E-GE3
Vishay
SIHG050N60E-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPNo
EU RoHSCompliant
MountingThrough Hole
ECCN (US)EAR99
PackagingTO-247-3
Pin Count3
AutomotiveNo
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width5.31(Max)
Package Height20.82(Max)
Package Length15.87(Max)
Product CategoryPower MOSFET
Supplier PackageTO-247AC
Typical Fall Time (ns)48
Typical Rise Time (ns)82
Number of Elements per Chip1
Maximum Power Dissipation (mW)278000
Typical Gate Charge @ 10V (nC)65
Typical Gate Charge @ Vgs (nC)65@10V
Maximum Gate Source Voltage (V)±30
Typical Turn-On Delay Time (ns)35
Maximum Drain Source Voltage (V)600
Typical Turn-Off Delay Time (ns)67
Maximum Gate Threshold Voltage (V)600
Typical Gate Threshold Voltage (V)10
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)51
Typical Input Capacitance @ Vds (pF)3459@100V
Maximum Drain Source Resistance (mOhm)50@10V
Maximum Continuous Drain Current on PCB @ TC=25°C (A)51
Description
SIHG050N60E-GE3 Vishay MOSFETs Transistor N-CH 600V 51A 3-Pin(3+Tab) TO-247AC - Arrow.com
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