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MOSFETs NVMYS4D1N06CLTWG
onsemi
NVMYS4D1N06CLTWG
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| Tab | Tab |
| PPAP | Yes |
| SVHC | Yes |
| EU RoHS | Compliant with Exemption |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 5 |
| Automotive | Yes |
| PCB changed | 4 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Triple Source |
| Package Width | 4.15 |
| Package Height | 1.15 |
| Package Length | 4.9 |
| Product Category | Power MOSFET |
| Supplier Package | LFPAK |
| Maximum IDSS (uA) | 10 |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 5 |
| Typical Rise Time (ns) | 15 |
| Supplier Temperature Grade | Automotive |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 3700 |
| Typical Gate Charge @ 10V (nC) | 34 |
| Typical Gate Charge @ Vgs (nC) | 34@10V|16@4.5V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 10 |
| Maximum Drain Source Voltage (V) | 60 |
| Typical Turn-Off Delay Time (ns) | 24 |
| Maximum Gate Threshold Voltage (V) | 2 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 22 |
| Typical Input Capacitance @ Vds (pF) | 2200@25V |
| Maximum Drain Source Resistance (mOhm) | 4@10V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Description |
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