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PMCM6501VNE
PMCM6501VNE
MOSFETs PMCM6501VNE
Nexperia
PMCM6501VNE
--
Diodes, Transistors and Thyristors
MOSFETs
PMCM6501VNE.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
Pin Count6
AutomotiveNo
PCB changed6
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Dual Drain Triple Source
Package Width0.98
Package Height0.15
Package Length1.48
Product CategorySmall Signal
Supplier PackageWLCSP
Maximum IDSS (uA)1
Process TechnologyTMOS
Typical Fall Time (ns)73.2
Typical Rise Time (ns)33.5
Number of Elements per Chip1
Maximum Power Dissipation (mW)1300
Typical Gate Charge @ 10V (nC)16.1
Typical Gate Charge @ Vgs (nC)16.1@4.5V
Maximum Gate Source Voltage (V)8
Typical Turn-On Delay Time (ns)10.8
Maximum Drain Source Voltage (V)12
Typical Turn-Off Delay Time (ns)97.5
Maximum Gate Threshold Voltage (V)0.9
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)9.6
Typical Input Capacitance @ Vds (pF)920@6V
Maximum Drain Source Resistance (mOhm)18@4.5V
Maximum Gate Source Leakage Current (nA)10000
Description
Trans MOSFET N-CH 12V 9.6A 6-Pin WLCSP
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