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PMDPB70XP,115
PMDPB70XP,115
MOSFETs PMDPB70XP,115
Nexperia
PMDPB70XP,115
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Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveNo
PCB changed6
Part StatusActive
Channel ModeEnhancement
Channel TypeP
ConfigurationDual
Package Width2.1(Max)
Package Height0.61(Max)
Package Length2.1(Max)
Product CategorySmall Signal
Supplier PackageHUSON EP
Maximum IDSS (uA)1
Process TechnologyTMOS
Typical Fall Time (ns)48
Typical Rise Time (ns)15
Number of Elements per Chip2
Maximum Power Dissipation (mW)1170
Typical Gate Charge @ Vgs (nC)5.2@5V
Maximum Gate Source Voltage (V)12
Typical Turn-On Delay Time (ns)3
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)112
Maximum Gate Threshold Voltage (V)1
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)2.9
Typical Input Capacitance @ Vds (pF)680@15V
Maximum Drain Source Resistance (mOhm)87@4.5V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET P-CH 30V 2.9A 6-Pin HUSON EP T/R
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