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PMDT670UPE,115
PMDT670UPE,115
MOSFETs PMDT670UPE,115
Nexperia
PMDT670UPE,115
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Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
PPAPUnknown
SVHCYes
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveYes
PCB changed6
Part StatusActive
Channel ModeEnhancement
Channel TypeP
ConfigurationDual
Package Width1.3(Max)
Package Height0.6(Max)
Package Length1.7(Max)
Product CategorySmall Signal
Supplier PackageSOT-666
Process TechnologyTMOS
Typical Fall Time (ns)72
Typical Rise Time (ns)30
Number of Elements per Chip2
Maximum Power Dissipation (mW)500
Typical Gate Charge @ Vgs (nC)0.76@4.5V
Maximum Gate Source Voltage (V)8
Typical Turn-On Delay Time (ns)18
Maximum Drain Source Voltage (V)20
Typical Turn-Off Delay Time (ns)80
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)0.55
Typical Input Capacitance @ Vds (pF)58@10V
Maximum Drain Source Resistance (MOhm)850@4.5V
Description
Trans MOSFET P-CH 20V 0.55A Automotive 6-Pin SOT-666 T/R
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