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PMGD175XNEX
PMGD175XNEX
MOSFETs PMGD175XNEX
Nexperia
PMGD175XNEX
--
Diodes, Transistors and Thyristors
MOSFETs
PMGD175XNEX.pdf
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveNo
PCB changed6
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationDual
Package Width1.35(Max)
Package Height1(Max)
Package Length2.2(Max)
Product CategorySmall Signal
Supplier PackageTSSOP
Maximum IDSS (uA)1
Process TechnologyTMOS
Typical Fall Time (ns)6
Typical Rise Time (ns)14
Number of Elements per Chip2
Maximum Power Dissipation (mW)390
Typical Gate Charge @ Vgs (nC)1.05@4.5V
Maximum Gate Source Voltage (V)12
Typical Output Capacitance (pF)13
Typical Turn-On Delay Time (ns)7
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)17
Maximum Gate Threshold Voltage (V)1.25
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)0.87
Typical Input Capacitance @ Vds (pF)81@15V
Maximum Drain Source Resistance (mOhm)252@4.5V
Maximum Gate Source Leakage Current (nA)10000
Typical Reverse Transfer Capacitance @ Vds (pF)9@15V
Description
Trans MOSFET N-CH 30V 0.87A 6-Pin TSSOP T/R
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