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PMH850UPEH
PMH850UPEH
MOSFETs PMH850UPEH
Nexperia
PMH850UPEH
--
Diodes, Transistors and Thyristors
MOSFETs
PMH850UPEH.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle
Package Width0.62
Package Height0.36(Max)
Package Length0.62
Product CategoryPower MOSFET
Supplier PackageDFN
Maximum IDSS (uA)1
Process TechnologyTMOS
Typical Fall Time (ns)3
Typical Rise Time (ns)2
Number of Elements per Chip1
Maximum Power Dissipation (mW)660
Typical Gate Charge @ Vgs (nC)0.6@4.5V
Maximum Gate Source Voltage (V)8
Typical Turn-On Delay Time (ns)6
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)2
Maximum Gate Threshold Voltage (V)0.95
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)0.6
Typical Input Capacitance @ Vds (pF)62.2@15V
Maximum Drain Source Resistance (mOhm)1000@4.5V
Maximum Gate Source Leakage Current (nA)5000
Description
Trans MOSFET P-CH 30V 0.6A 3-Pin DFN T/R
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