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PMPB07R3ENX
PMPB07R3ENX
MOSFETs PMPB07R3ENX
Nexperia
PMPB07R3ENX
--
Diodes, Transistors and Thyristors
MOSFETs
PMPB07R3ENX.pdf
Specification
Product AttributeAttribute Value
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
PCB changed6
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quint Drain
Package Width2
Package Height0.58
Package Length2
Product CategoryPower MOSFET
Supplier PackageDFN-M EP
Maximum IDSS (uA)1
Process TechnologyTMOS
Typical Fall Time (ns)3
Typical Rise Time (ns)2
Number of Elements per Chip1
Maximum Power Dissipation (mW)3800
Typical Gate Charge @ 10V (nC)13
Typical Gate Charge @ Vgs (nC)13@10V
Maximum Gate Source Voltage (V)20
Typical Turn-On Delay Time (ns)3
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)13
Maximum Gate Threshold Voltage (V)2.2
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)12
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)914@15V
Maximum Drain Source Resistance (mOhm)8.6@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 30V 12A 6-Pin DFN-M EP T/R
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