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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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PSMN015-110P,127
PSMN015-110P,127
MOSFETs PSMN015-110P,127
Nexperia
PSMN015-110P,127
--
Diodes, Transistors and Thyristors
MOSFETs
PSMN015-110P,127.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingRail
Pin Count3
AutomotiveNo
PCB changed3
Part StatusLTB
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width4.7(Max)
Package Height9.4(Max)
Package Length10.3(Max)
Product CategoryPower MOSFET
Supplier PackageTO-220AB
Process TechnologyTrenchFET
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)50
Typical Rise Time (ns)65
Number of Elements per Chip1
Maximum Power Dissipation (mW)300000
Typical Gate Charge @ 10V (nC)90
Typical Gate Charge @ Vgs (nC)90@10V
Maximum Gate Source Voltage (V)20
Typical Turn-On Delay Time (ns)25
Maximum Drain Source Voltage (V)110
Typical Turn-Off Delay Time (ns)95
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)75
Typical Input Capacitance @ Vds (pF)4900@25V
Maximum Drain Source Resistance (MOhm)15@10V
Description
Trans MOSFET N-CH Si 110V 75A 3-Pin(3+Tab) TO-220AB Rail
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