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SCTWA90N65G2V
SCTWA90N65G2V
MOSFETs SCTWA90N65G2V
STMicroelectronics
SCTWA90N65G2V
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant
MaterialSiC
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width5.15(Max)
Package Height20.07(Max)
Package Length16.02(Max)
Product CategoryPower MOSFET
Supplier PackageTO-247
Maximum IDSS (uA)10
Standard Package NameTO-247
Typical Fall Time (ns)16
Typical Rise Time (ns)38
Number of Elements per Chip1
Maximum Power Dissipation (mW)390000
Typical Gate Charge @ 10V (nC)157
Typical Gate Charge @ Vgs (nC)157@18V
Maximum Gate Source Voltage (V)22
Typical Turn-On Delay Time (ns)26
Maximum Drain Source Voltage (V)650
Typical Turn-Off Delay Time (ns)58
Maximum Gate Threshold Voltage (V)5
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)90
Typical Input Capacitance @ Vds (pF)3300@400V
Maximum Drain Source Resistance (mOhm)25@18V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH SiC 650V 90A 3-Pin(3+Tab) TO-247 Tube
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