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MOSFETs PSMN1R2-55SLHAX
Nexperia
PSMN1R2-55SLHAX
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| Tab | Tab |
| EU RoHS | Compliant with Exemption |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 5 |
| PCB changed | 4 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Triple Source |
| Package Width | 5.1(Max) |
| Package Height | 1.7(Max) |
| Package Length | 8.1(Max) |
| Product Category | Power MOSFET |
| Supplier Package | LFPAK |
| Typical Fall Time (ns) | 58 |
| Typical Rise Time (ns) | 70 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 375000 |
| Typical Gate Charge @ 10V (nC) | 225 |
| Typical Gate Charge @ Vgs (nC) | 116@4.5V|225@10V |
| Maximum Gate Source Voltage (V) | 20 |
| Typical Turn-On Delay Time (ns) | 75 |
| Maximum Drain Source Voltage (V) | 55 |
| Typical Turn-Off Delay Time (ns) | 140 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 330 |
| Operating Junction Temperature (°C) | -55 to 175 |
| Typical Input Capacitance @ Vds (pF) | 18409@27V |
| Maximum Drain Source Resistance (mOhm) | 1.03@10V |
| Description |
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