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PSMN4R1-60YLX
PSMN4R1-60YLX
MOSFETs PSMN4R1-60YLX
Nexperia
PSMN4R1-60YLX
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
Pin Count5
AutomotiveNo
PCB changed4
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Triple Source
Package Width4.1(Max)
Package Height1.1(Max)
Package Length5(Max)
Product CategoryPower MOSFET
Supplier PackageLFPAK
Maximum IDSS (uA)500
Process TechnologyTMOS
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)47
Typical Rise Time (ns)53
Number of Elements per Chip1
Maximum Power Dissipation (mW)238000
Typical Gate Charge @ 10V (nC)103
Typical Gate Charge @ Vgs (nC)103@10V
Maximum Gate Source Voltage (V)20
Typical Turn-On Delay Time (ns)28
Maximum Drain Source Voltage (V)60
Typical Turn-Off Delay Time (ns)80
Maximum Gate Threshold Voltage (V)2.1
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)100
Typical Input Capacitance @ Vds (pF)5890@25V
Maximum Drain Source Resistance (MOhm)4.1@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 60V 100A 5-Pin(4+Tab) LFPAK
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