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PXN6R2-25QLJ
PXN6R2-25QLJ
MOSFETs PXN6R2-25QLJ
Nexperia
PXN6R2-25QLJ
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Diodes, Transistors and Thyristors
MOSFETs
PXN6R2-25QLJ.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Package Width3
Package Height0.8
Package Length3.15
Product CategoryPower MOSFET
Supplier PackageMLPAK33 EP
Maximum IDSS (uA)1
Process TechnologyTMOS
Typical Fall Time (ns)3
Typical Rise Time (ns)8
Number of Elements per Chip1
Maximum Power Dissipation (mW)4800
Typical Gate Charge @ 10V (nC)17
Typical Gate Charge @ Vgs (nC)17@10V|8.1@4.5V
Maximum Gate Source Voltage (V)20
Typical Turn-On Delay Time (ns)5
Maximum Drain Source Voltage (V)25
Typical Turn-Off Delay Time (ns)6
Maximum Gate Threshold Voltage (V)2.2
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)13.1
Typical Input Capacitance @ Vds (pF)1200@12.5V
Maximum Drain Source Resistance (mOhm)6.2@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 25V 13.1A 8-Pin MLPAK33 EP T/R
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