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RFP3055LE
RFP3055LE
MOSFETs RFP3055LE
onsemi
RFP3055LE
--
Diodes, Transistors and Thyristors
MOSFETs
RFP3055LE.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
TabTab
PPAPNo
EU RoHSCompliant
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingRail
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width4.57(Max)
Package Height9.02(Max)
Package Length10.28(Max)
Product CategoryPower MOSFET
Supplier PackageTO-220AB
Maximum IDSS (uA)1
Standard Package NameTO-220
Typical Fall Time (ns)39
Typical Rise Time (ns)105
Number of Elements per Chip1
Maximum Power Dissipation (mW)38000
Typical Gate Charge @ 10V (nC)9.4
Typical Gate Charge @ Vgs (nC)9.4@10V
Maximum Gate Source Voltage (V)±16
Typical Turn-On Delay Time (ns)8
Maximum Drain Source Voltage (V)60
Typical Turn-Off Delay Time (ns)22
Maximum Gate Threshold Voltage (V)3
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)11
Typical Input Capacitance @ Vds (pF)350@25V
Maximum Drain Source Resistance (MOhm)107@5V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH Si 60V 11A 3-Pin(3+Tab) TO-220AB Rail
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