Product Attribute | Attribute Value |
Tab | Tab |
PPAP | No |
SVHC | Yes |
EU RoHS | Compliant with Exemption |
Material | Si |
Mounting | Through Hole |
ECCN (US) | EAR99 |
Packaging | Tube |
Pin Count | 3 |
Automotive | No |
Lead Shape | Through Hole |
PCB changed | 3 |
Part Status | Active |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single |
Package Width | 4.7(Max) |
Package Height | 9.4(Max) |
Package Length | 10.67(Max) |
Product Category | Power MOSFET |
Supplier Package | TO-220 |
Maximum IDSS (uA) | 1 |
Process Technology | MegaFET |
Standard Package Name | TO-220 |
Typical Fall Time (ns) | 24 |
Typical Rise Time (ns) | 137 |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 150000 |
Typical Gate Charge @ Vgs (nC) | 120@20V |
Maximum Gate Source Voltage (V) | ±20 |
Typical Output Capacitance (pF) | 792 |
Typical Turn-On Delay Time (ns) | 10 |
Maximum Drain Source Voltage (V) | 60 |
Typical Turn-Off Delay Time (ns) | 32 |
Maximum Diode Forward Voltage (V) | 1.5 |
Maximum Gate Threshold Voltage (V) | 4 |
Minimum Gate Threshold Voltage (V) | 2 |
Maximum Operating Temperature (°C) | 175 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 70 |
Operating Junction Temperature (°C) | -55 to 175 |
Typical Input Capacitance @ Vds (pF) | 2250@25V |
Maximum Drain Source Resistance (MOhm) | 14@10V |
Maximum Gate Source Leakage Current (nA) | 100 |
Maximum Positive Gate Source Voltage (V) | 20 |
Typical Reverse Transfer Capacitance @ Vds (pF) | 206@25V |
Description |