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SCT30N120H
SCT30N120H
MOSFETs SCT30N120H
STMicroelectronics
SCT30N120H
--
Diodes, Transistors and Thyristors
MOSFETs
SCT30N120H.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant
MaterialSiC
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
PCB changed2
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width9.35(Max)
Package Height4.7(Max)
Package Length10.4(Max)
Product CategoryPower MOSFET
Supplier PackageH2PAK
Typical Fall Time (ns)28
Typical Rise Time (ns)20
Number of Elements per Chip1
Maximum Power Dissipation (mW)230000
Typical Gate Charge @ Vgs (nC)105@20V
Maximum Gate Source Voltage (V)-10|25
Typical Turn-On Delay Time (ns)19
Maximum Drain Source Voltage (V)1200
Typical Turn-Off Delay Time (ns)45
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)42
Typical Input Capacitance @ Vds (pF)1700@400V
Maximum Drain Source Resistance (mOhm)100@20V
Description
Trans MOSFET N-CH SiC 1.2KV 42A 3-Pin(2+Tab) H2PAK T/R
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