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MOSFETs SCTL90N65G2V
STMicroelectronics
SCTL90N65G2V
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Diodes, Transistors and Thyristors
MOSFETs
SCTL90N65G2V.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MaterialSiC
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count5
AutomotiveNo
PCB changed5
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Triple Source
Package Width8
Package Height0.9(Max)
Package Length8
Product CategoryPower MOSFET
Supplier PackagePower Flat EP
Maximum IDSS (uA)10
Typical Fall Time (ns)38
Typical Rise Time (ns)16
Number of Elements per Chip1
Maximum Power Dissipation (mW)935000
Typical Gate Charge @ Vgs (nC)157@18V
Maximum Gate Source Voltage (V)22
Typical Turn-On Delay Time (ns)26
Maximum Drain Source Voltage (V)650
Typical Turn-Off Delay Time (ns)58
Maximum Gate Threshold Voltage (V)5
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)40
Typical Input Capacitance @ Vds (pF)3380@400V
Maximum Drain Source Resistance (mOhm)24@18V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH SiC 650V 40A 5-Pin Power Flat EP T/R
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