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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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SCTW100N120G2AG
SCTW100N120G2AG
MOSFETs SCTW100N120G2AG
STMicroelectronics
SCTW100N120G2AG
--
Diodes, Transistors and Thyristors
MOSFETs
SCTW100N120G2AG.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPUnknown
SVHCYes
EU RoHSCompliant with Exemption
MaterialSiC
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveYes
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width5
Package Height20
Package Length15.6
Product CategoryPower MOSFET
Supplier PackageHIP-247
Maximum IDSS (uA)10
SVHC Exceeds ThresholdYes
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Maximum Power Dissipation (mW)565000
Typical Gate Charge @ Vgs (nC)163@18V
Maximum Gate Source Voltage (V)22
Maximum Drain Source Voltage (V)1200
Maximum Gate Threshold Voltage (V)5
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)75
Typical Input Capacitance @ Vds (pF)3400@800V
Maximum Drain Source Resistance (mOhm)39@18V
Maximum Gate Source Leakage Current (nA)20(Typ)
Description
Trans MOSFET N-CH SiC 1.2KV 75A Automotive 3-Pin(3+Tab) HIP-247 Tube
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