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SCTW40N120G2V
SCTW40N120G2V
MOSFETs SCTW40N120G2V
STMicroelectronics
SCTW40N120G2V
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MaterialSiC
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width5
Package Height20
Package Length15.6
Product CategoryPower MOSFET
Supplier PackageHIP-247
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)7.9
Typical Rise Time (ns)10.3
Number of Elements per Chip1
Maximum Power Dissipation (mW)278000
Typical Gate Charge @ Vgs (nC)61@18V
Maximum Gate Source Voltage (V)22
Typical Turn-On Delay Time (ns)13.4
Maximum Drain Source Voltage (V)1200
Typical Turn-Off Delay Time (ns)22
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)36
Typical Input Capacitance @ Vds (pF)1233@800V
Maximum Drain Source Resistance (mOhm)100@18V
Description
Trans MOSFET N-CH SiC 1.2KV 36A 3-Pin(3+Tab) HIP-247 Tube
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