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SI1011X-T1-GE3
SI1011X-T1-GE3
MOSFETs SI1011X-T1-GE3
Vishay
SI1011X-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeFlat
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle
Package Width0.95(Max)
Package Height0.8(Max)
Package Length1.7(Max)
Product CategoryPower MOSFET
Supplier PackageSC-89
Maximum IDSS (uA)1
Process TechnologyTrenchFET
Standard Package NameSC
Typical Fall Time (ns)9
Typical Rise Time (ns)11
Number of Elements per Chip1
Maximum Power Dissipation (mW)190
Typical Gate Charge @ Vgs (nC)2@4.5V|1.15@2.5V
Maximum Gate Source Voltage (V)±5
Typical Turn-On Delay Time (ns)4
Maximum Drain Source Voltage (V)12
Typical Turn-Off Delay Time (ns)9
Maximum Gate Threshold Voltage (V)0.8
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)0.48
Typical Input Capacitance @ Vds (pF)62@6V
Maximum Drain Source Resistance (mOhm)640@4.5V
Maximum Gate Source Leakage Current (nA)10000
Description
Trans MOSFET P-CH 12V 0.48A 3-Pin SC-89 T/R
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