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SI1013R-T1-GE3
SI1013R-T1-GE3
MOSFETs SI1013R-T1-GE3
Vishay
SI1013R-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
PCB changed3
Part StatusNRND
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle
Package Width0.76
Package Height0.7
Package Length1.58
Product CategoryPower MOSFET
Supplier PackageSC-75A
Process TechnologyTrenchFET
Standard Package NameSC
Typical Fall Time (ns)11
Typical Rise Time (ns)9
Number of Elements per Chip1
Maximum Power Dissipation (mW)175
Typical Gate Charge @ Vgs (nC)1500@4.5V
Maximum Gate Source Voltage (V)±6
Typical Output Capacitance (pF)13
Typical Turn-On Delay Time (ns)5
Maximum Drain Source Voltage (V)20
Typical Turn-Off Delay Time (ns)35
Typical Gate to Drain Charge (nC)450
Maximum Gate Threshold Voltage (V)0.45(Min)
Typical Gate to Source Charge (nC)150
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)0.35
Maximum Drain Source Resistance (mOhm)1200@4.5V
Description
Trans MOSFET P-CH 20V 0.35A 3-Pin SC-75A T/R
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