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SI1051X-T1-GE3
SI1051X-T1-GE3
MOSFETs SI1051X-T1-GE3
Vishay
SI1051X-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveNo
PCB changed6
Part StatusObsolete
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle Quad Drain
Package Width1.2
Package Height0.6(Max)
Package Length1.7(Max)
Product CategoryPower MOSFET
Supplier PackageSC-89
Standard Package NameSC
Typical Fall Time (ns)16
Typical Rise Time (ns)36
Number of Elements per Chip1
Maximum Power Dissipation (mW)236
Typical Gate Charge @ Vgs (nC)6.3@5V|5.91@4.5V
Maximum Gate Source Voltage (V)±5
Typical Output Capacitance (pF)180
Typical Turn-On Delay Time (ns)7.2
Maximum Drain Source Voltage (V)8
Typical Turn-Off Delay Time (ns)52
Typical Gate to Drain Charge (nC)1.25
Maximum Gate Threshold Voltage (V)1
Typical Gate to Source Charge (nC)1.98
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)1.2
Typical Input Capacitance @ Vds (pF)560@4V
Typical Reverse Recovery Charge (nC)4.7
Maximum Drain Source Resistance (MOhm)122@4.5V
Description
Trans MOSFET P-CH 8V 1.2A 6-Pin SC-89 T/R
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