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MOSFETs SI1065X-T1-GE3
Vishay
SI1065X-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 6 |
| Automotive | No |
| PCB changed | 6 |
| Part Status | Obsolete |
| Channel Mode | Enhancement |
| Channel Type | P |
| Configuration | Single Quad Drain |
| Package Width | 1.2 |
| Package Height | 0.6(Max) |
| Package Length | 1.7(Max) |
| Product Category | Power MOSFET |
| Supplier Package | SC-89 |
| Maximum IDSS (uA) | 0.001 |
| Process Technology | TrenchFET |
| Standard Package Name | SC |
| Typical Fall Time (ns) | 27 |
| Typical Rise Time (ns) | 27 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 236 |
| Typical Gate Charge @ Vgs (nC) | 7.2@5V|6.7@4.5V |
| Maximum Gate Source Voltage (V) | ±8 |
| Typical Output Capacitance (pF) | 190 |
| Typical Turn-On Delay Time (ns) | 13 |
| Maximum Drain Source Voltage (V) | 12 |
| Typical Turn-Off Delay Time (ns) | 45 |
| Typical Gate to Drain Charge (nC) | 2.7 |
| Maximum Gate Threshold Voltage (V) | 0.95 |
| Typical Gate to Source Charge (nC) | 0.84 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 1.18 |
| Typical Input Capacitance @ Vds (pF) | 480@6V |
| Typical Reverse Recovery Charge (nC) | 10.22 |
| Maximum Drain Source Resistance (mOhm) | 156@4.5V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Description |
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