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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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SI1410EDH-T1-GE3
SI1410EDH-T1-GE3
MOSFETs SI1410EDH-T1-GE3
Vishay
SI1410EDH-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
SI1410EDH-T1-GE3.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveNo
Lead ShapeGull-wing
PCB changed6
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain
Package Width1.25
Package Height1(Max)
Package Length2
Product CategoryPower MOSFET
Supplier PackageSC-70
Maximum IDSS (uA)1
Process TechnologyTrenchFET
Standard Package NameSOT
Typical Fall Time (ns)1200
Typical Rise Time (ns)400
Number of Elements per Chip1
Maximum Power Dissipation (mW)1560
Typical Gate Charge @ Vgs (nC)5.6@4.5V
Maximum Gate Source Voltage (V)±12
Typical Turn-On Delay Time (ns)150
Maximum Drain Source Voltage (V)20
Typical Turn-Off Delay Time (ns)1900
Maximum Gate Threshold Voltage (V)0.45(Min)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)2.9
Maximum Drain Source Resistance (mOhm)70@4.5V
Maximum Gate Source Leakage Current (nA)1000
Description
Trans MOSFET N-CH 20V 2.9A 6-Pin SC-70 T/R
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